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TH9030 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI TH9030 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz.

Key Features

  • Common Collector.
  • Hermetic Microstrip Package.
  • Omnigold™ Metalization System DIM A L G H J F I K M NP.

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Datasheet Details

Part number TH9030
Manufacturer Advanced Semiconductor
File Size 46.58 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TH9030 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TH9030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH9030 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • Common Collector • Hermetic Microstrip Package • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCEO VCBO VEBO PDISS TJ TSTG θJC O O B C D E F .255 / 6.48 .132 / 3.35 600 mA 20 V 45 V 3.0 V 7.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 25 C/W O O O O .117 / 2.