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PT9733 Datasheet

NPN SILICON RF POWER TRANSISTOR

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PT9733
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9733 is an NPN power
transistor designed for 25 V Class-C
ground station transmitters, it utilizes
emitter ballasting and gold metalization
to provide optimum VSWR capability.
FEATURES:
Common Emitter
PG = 6.0 dB at 50 W/175 MHz
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 8.0 A
VCES
60 V
VEBO
4.0 V
PDISS
85 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 2.1 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
B
E
ØC
A
C
B
E
D
#8-32 UNC-2A
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
E
HI
J
G
F
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 25 mA
BVCES
IC = 50 mA
BVEBO
IE = 8.0 mA
ICES VCE = 25 V
hFE VCE = 10 V
IC = 500 mA
MINIMUM TYPICAL MAXIMUM
35
60
4.0
2.0
20 150
UNITS
V
V
V
mA
---
Cob
PG
ηC
VSWR
VCB = 28 V
VCE = 28 V
PIN = 10 W
POUT =50 W
f = 1.0 MHz
f = 175 MHz
6.0
60
90 Pf
6.0 dB
60 %
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number PT9733
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
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