PT9701 NPN SILICON RF POWER TRANSISTOR
INCLUDE:
• Gold Metalization
• Emitter Ballasting
• High Gain
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °.
in the 225 - 400 MHz Military Communications Band.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
• Gold Metalizatio.
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