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PT9701 Datasheet

NPN SILICON RF POWER TRANSISTOR

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PT9701
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9701 is a Common
Emitter Device Designed for Class A ,
AB and C Amplifier Applications in the
225 - 400 MHz Military
Communications Band.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
High Gain
MAXIMUM RATINGS
IC 1.25 A
VCES
45 V
PDISS
14 W @ TC = 25 °C
TJ -55 °C to +200 °C
TSTG
-55 °C to +200 °C
θJC 12 °C/W
PACKAGE STYLE .280 4L STUD
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 20 mA
BVCES
IC = 10 mA
BVEBO
IE = 1.0 mA
hFE
VCE = 5.0 V
IC = 200 mA
Cob VCB = 28 V
f = 1.0 MHz
PG
ηC
VCE = 28 V
Pout = 5.0 W
f = 400 MHz
MINIMUM TYPICAL MAXIMUM
25
45
3.5
15
UNITS
V
V
V
---
7.0 pF
10 12
50 55
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


Part Number PT9701
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
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PT9701 Datasheet PDF






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