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CD2315 Datasheet

NPN SILICON RF POWER TRANSISTOR

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CD2315
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CD2315 is designed for
broadband amplifier applications in
commercial and amateur
communication equipment.
FEATURES:
PG = 18 dB min. at 75 W/30 MHz
IMD3 = -30 dBc max. at 75 W (PEP)
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE 35 V
PDISS
140 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 1.05 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
21
32
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
1 = Collector 2 = Emitter 3 = Base
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 50 mA
RBE = 10
BVEBO
IE = 10 mA
ICES VE = 28 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5
10 100
UNITS
V
V
V
mA
---
Cob VCB = 28 V
f = 1.0 MHz
80 pF
GPE VCE = 25 V
ICQ = 3.2 A
f = 225 MHz
13.5
14.5
dB
IMD3
PREF = 16 W
Vision = -8 dB Snd. = -7 dB
Side Band = -16 dB
-55 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1


Part Number CD2315
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
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