• Part: CD2315
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 15.33 KB
Download CD2315 Datasheet PDF
Advanced Semiconductor
CD2315
DESCRIPTION : The ASI CD2315 is designed for broadband amplifier applications in mercial and amateur munication equipment. PACKAGE STYLE .380 4L FLG B .112 x 45° A 1 2 Ø.125 NOM. FULL R J .125 FEATURES : - PG = 18 d B min. at 75 W/30 MHz - IMD3 = -30 d Bc max. at 75 W (PEP) - Omnigold™ Metalization System DIM F MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 10 A 60 V 35 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.05 °C/W A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.48 1 = Collector 2 = Emitter 3 = Base CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES h FE Cob GPE IMD3 IC = 50 m A IC = 50 m A IE = 10 m A VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0...