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BAM120 Datasheet

NPN SILICON RF POWER TRANSISTOR

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BAM120
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM120 is Designed to
operate in a collector modulated VHF
Power Amplifier Applications up to 150
MHz.
FEATURES:
• ηC = 65 % typ. @ 120 W/150 MHz
PG = 9.0 dB typ. @ 120 W/150 MHz
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 12 A
VCES
60 V
VEBO
4.0 V
PDISS
140 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC 1.2 °C/W
PACKAGE STYLE .500 4L FLG
DataSheet4U.com
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10430
DataShee
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCES
IC = 20 mA
BVCEO
IC = 50 mA
BVEBO
IE = 5.0 mA
hFE VCE = 25 V
IC = 3.5 A
MINIMUM TYPICAL MAXIMUM
60
32
4.0
15 100
UNITS
V
V
V
---
COB
VCE = 27 V
f = 1.0 MHz
240
pF
PG
ηC VCC = 27 V POUT = 120 W f = 150 MHz
9.0
65
dB
%
DataSheAet4DU.cVomA N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
DataSheet4 U .com
Specifications are subject to change without notice.
REV. A
1/1


Part Number BAM120
Description NPN SILICON RF POWER TRANSISTOR
Maker Advanced Semiconductor
Total Page 1 Pages
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