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BAM120 - NPN SILICON RF POWER TRANSISTOR

General Description

Power Amplifier Applications up to 150 MHz.

Key Features

  • ηC = 65 % typ. @ 120 W/150 MHz.
  • PG = 9.0 dB typ. @ 120 W/150 MHz.
  • Omnigold™ Metalization System.

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Datasheet Details

Part number BAM120
Manufacturer Advanced Semiconductor
File Size 173.17 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet BAM120 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BAM120 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM120 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 150 MHz. PACKAGE STYLE .500 4L FLG FEATURES: • ηC = 65 % typ. @ 120 W/150 MHz • PG = 9.0 dB typ. @ 120 W/150 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG θJC 12 A 60 V 4.0 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.2 °C/W DataSheet4U.com 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ee DataSh ORDER CODE: ASI10430 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO hFE COB PG ηC VCC = 27 V IC = 20 mA IC = 50 mA IE = 5.0 mA VCE = 25 V VCE = 27 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 60 32 4.0 UNITS V V V IC = 3.5 A f = 1.