AT12017-21
Key Features
- High Tuning Ratio, ∆CT = 9.5 MIN.
- High Quality Factor, Q = 300 MIN.
- Hermetic Package, CP = .20 pF LS = .42 nH
- Part: AT12017-21
- Description: SILICON ABRUPT VARACTOR DIODE
- Category: Diode
- Manufacturer: Advanced Semiconductor
- Size: 48.44 KB