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AT12016-21 - SILICON ABRUPT VARACTOR DIODE

Description

The AT12016-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.

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Datasheet Details

Part number AT12016-21
Manufacturer Advanced Semiconductor
File Size 48.44 KB
Description SILICON ABRUPT VARACTOR DIODE
Datasheet download datasheet AT12016-21 Datasheet

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www.DataSheet4U.com AT12016-21 SILICON ABRUPT VARACTOR DIODE DESCRIPTION: The AT12016-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE STYLE 21 FEATURES INCLUDE: • High Quality Factor, Q = 300 MIN. CP = .20 pF • Hermetic Pkg, LS = .42 nH • High Tuning Ratio, ∆CT = 9.0 MIN. MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W NONE O O O O CHARACTERISTICS SYMBOL VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL 120 MAXIM 1.0 100 UNITS V V µA pF ----- f = 1.0 MHz f = 1.0 MHz f = 50 MHz f = 2400 MHz 16 9.0 300 18 20 0.
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