ALN64535 transistor equivalent, npn silicon low noise rf transistor.
INCLUDE:
* NF = 1.6 dB Typical @ 2 GHz
* S212 = 11 dB Typical @ 2 GHz
* Hermetic Ceramic Package
PACKAGE STYLE SS35
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDI.
up to 4.0 GHz.
FEATURES INCLUDE:
* NF = 1.6 dB Typical @ 2 GHz
* S212 = 11 dB Typical @ 2 GHz
* Hermetic.
The ALN64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz.
FEATURES INCLUDE:
* NF = 1.6 dB Typical @ 2 GHz
* S212 = 11 dB Typical @ 2 GHz
* Hermetic Ceramic Package
PACKAGE STYLE SS3.
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