ACR3001 transistor equivalent, npn silicon rf power transistor.
* PG = 7 dB min. at 1.0 W / 3,000 MHz
* Hermetic Microstrip Package
* Omnigold™ Metalization System
DIM A L
G
H J
F I K M NP
MINIMUM
inches / mm
MAXIMUM.
up to 3500 MHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES:
* PG = 7 dB min. at 1.0 W / 3,0.
The ACR3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES:
* PG = 7 dB min. at 1.0 W / 3,000 MHz
* Hermetic Microstrip Package
* O.
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