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1N5709B Datasheet, Advanced Semiconductor

1N5709B diode equivalent, abrupt varactor diode.

1N5709B Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 38.59KB)

1N5709B Datasheet
1N5709B Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 38.59KB)

1N5709B Datasheet

Application

MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W N.

Description

The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose www.DataSheet4U.com applications. MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W NONE CHARACTERISTICS S.

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1N5709B Page 1

TAGS

1N5709B
ABRUPT
VARACTOR
DIODE
Advanced Semiconductor

Manufacturer


Advanced Semiconductor

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