MS2422 applications equivalent, rf & microwave transistors avionics applications.
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FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1.
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* DESIGNED
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FOR HIGH POWE.
The MS2422 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN. The MS2422 is designed with internal input/output matching resulting in improved broad.
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