MS2207
MS2207 is RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS manufactured by Advanced Power Technology.
Features
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- -
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- 1090 MHz 50 VOLTS 15:1 VSWR CAPABILITY INPUT / OUTPUT MATCHING POUT = 400 WATTS GP = 8.0 d B MINIMUM MON BASE CONFIGURATION
DESCRIPTION
:
The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation . under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions.
Data Shee
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
PDISS IC VCC TJ TSTG
Parameter
Value
880 24 55 200 -65 to +200
Unit
W A V °C °C
Power Dissipation Device Current Collector Supply Voltage Junction Temperature Storage Temperature
Thermal Data
RTH(J-C) Junction-case Thermal Resistance 0.17 °C/W
.
053-7113 Rev
- 11-2002
Data Sheet 4 U .
..
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
Symbol
BVCBO BVEBO BVCER Ices HFE IC = 50 m A IE = 15 m A IC = 50 m A VBE = 50 V VCE = 5 V
STATIC
Test Conditions Min.
IE = 0 m A IC = 0 m A RBE = 10Ω VCE = 0 V IC = 5 A 65 3.5 65 --10
Value Typ.
-----------
Max.
------30 200
Unit
V V V m A ---
DYNAMIC
Symbol POUT ηC GP
Conditions f = 1090 MHz f = 1090 MHz f = 1090 MHz Pulse Width =...
