Datasheet4U Logo Datasheet4U.com

MS2200 - RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS

Datasheet Details

Part number MS2200
Manufacturer Advanced Power Technology
File Size 374.58 KB
Description RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Datasheet download datasheet MS2200 Datasheet

General Description

: The MS2200 is a hermetically sealed, gold metallized silicon NPN DataSheet4U.com pulse power transistor mounted in a common base balanced configuration.

The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz.

DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 43.2 1167 +200 -65 to +150 V V V A W °C °C Thermal Data RTH(j-c) DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Overview

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2200 RF AND MICROWAVE TRANSISTORS UHF PULSED.

Key Features

  • 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle Refractory Gold Metallization Emitter Ballasting And Low Resistance For Reliability and Ruggedness Infinite VSWR Capability At Specified Operating Conditions Input Matched, Common Base Configuration Balanced Configuration.