MS2176 applications equivalent, rf and microwave transistors uhf pulsed applications.
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* 350 WATTS @ 10µ SEC PULSE WIDTH, 10% DUTY 300 WATTS @ 250µ SEC PULSE WIDTH 10% DUTY CYCLE 9.5 DB MIN. GAIN REFRACTORY GOLD METALLIZATI.
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* 350 WATTS @ 10µ SEC PULSE WIDTH, 10% DUTY 300 WATTS @ 250µ SEC PULSE WIDTH .
The MS2176 is a gold metallized silicon NPN pulse power transistor designed for applications requiring high peak power and low duty cycles within the frequency range of 400
– 500 MHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol P.
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