MS1454 transistors equivalent, rf & microwave transistors.
* Gold Metallization
* Diffused Emitter Ballasting
* Internal Input Matching
* Designed for Linear Operation
* High Saturated Power Capability
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ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Volt.
The MS1454 gold/metallized epitaxial silicon NPN planar transistor uses diffused emitter ballast resistors for high linearity class AB operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO.
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