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MS1227 Datasheet, Advanced Power Technology

MS1227 applications equivalent, rf & microwave transistors hf ssb applications.

MS1227 Avg. rating / M : 1.0 rating-12

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MS1227 Datasheet

Features and benefits


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* 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V ep.

Application

Features
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* 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON E.

Description

The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Para.

Image gallery

MS1227 Page 1 MS1227 Page 2 MS1227 Page 3

TAGS

MS1227
MICROWAVE
TRANSISTORS
SSB
APPLICATIONS
Advanced Power Technology

Manufacturer


Advanced Power Technology

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