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MS1227 - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Description

The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications.

This device utilizes emitter ballasting for improved ruggedness and reliability.

Features

  • 30 MHz 12.5 VOLTS GOLD.

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Datasheet Details

Part number MS1227
Manufacturer Advanced Power Technology
File Size 132.10 KB
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Datasheet download datasheet MS1227 Datasheet

Full PDF Text Transcription

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www.DataSheet4U.com MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 4.5 80 +200 -65 to +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 ° C/W MS1227.
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