MS1226 applications equivalent, rf & microwave transistors hf ssb applications.
30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxial silicon NPN planar transistor de.
Features
30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The.
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC PDISS TJ TSTG.
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