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MS1226 - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Description

The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications.

This device utilizes emitter ballasting for improved ruggedness and reliability.

Features

  • 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB.

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Datasheet Details

Part number MS1226
Manufacturer Advanced Power Technology
File Size 429.16 KB
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Datasheet download datasheet MS1226 Datasheet

Full PDF Text Transcription

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www.DataSheet4U.com MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Co llector-base Voltage Co llector-emitter Voltage Emit ter-Base Voltage Dev ice Current Po wer Dissipation Ju nction Temperature Storage Temperature Paramete r 65 36 4.0 4.5 80 +200 -65 to +150 Value U V V V A W C C nit Thermal Thermal Data RTH(J-C) Junction-case Thermal Resistance 2.2 C/W 053-7055 Rev - 10-2002 www.DataSheet4U.
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