MRF559G transistors equivalent, rf & microwave discrete low power transistors.
* Specified @ 12.5 V, 870 MHz Characteristics
* Output Power = .5 W
* Minimum Gain = 8.0 dB
* Efficiency 50%
* Cost Effective Macro X Package
* El.
Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Curr.
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