DME800 Datasheet, Advanced Power Technology

The device has gold thin-film metalization for proven highest MTTF. The transistor includes input and output prematch f.

The DME800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed DME systems at 1025 to 1150 MHz, with the pulse width and duty required for DME applications. The device has gold thin-film metalization for proven highest MTTF. The.

DME10P12K-F

DME10P15K-F

DME10P18K-F

DME10P1K-F

DME10P22K-F

DME10S12K-F

DME10S15K-F

DME10S18K-F

DME10S1K-F

DME10S22K-F

DME10S27K-F

DME10S33K-F

DME10S39K-F