BFR91 transistors equivalent, rf & microwave discrete low power transistors.
* High Current-Gain
– Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
* Low Noise Figure
– NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 d.
requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Vol.
Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base.
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