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Advanced Power Technology

APTGU20H120T3 Datasheet Preview

APTGU20H120T3 Datasheet

Full bridge

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APTGU20H120T3
www.DataSheet4U.com
Full - Bridge
PT IGBT Power Module
VCES = 1200V
IC = 20A @ Tc = 80°C
13 14
Q1 Q3
18 CR1 CR3
19
22 7
23 8
26 Q2 CR2 CR4 Q4
27
11
10
4
3
29 30
15
31 32
R1 16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7® Punch Through (PT) IGBT
- Low conduction loss
- Ultra fast tail current shutoff
- Low gate charge
- Switching frequency capability in the 200kHz
range
- Soft recovery parallel diodes
- Low diode VF
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
SSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Switching Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
36
20
80
±20
156
90A @ 960V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6




Advanced Power Technology

APTGU20H120T3 Datasheet Preview

APTGU20H120T3 Datasheet

Full bridge

No Preview Available !

APTGU20H120T3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
BVCES Collector - Emitter Breakdown Voltage
ICES Zero Gate Voltage Collector Current
VGE = 0V, IC = 250µA
VGE = 0V
Tj = 25°C
VCE = 1200V Tj = 125°C
1200
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 20A
Tj = 25°C
Tj = 125°C
3.3
3.0
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = VCE, IC = 1mA
VGE = ±20V, VCE = 0V
3
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Max
250
2500
3.9
Unit
V
µA
V
6V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon1 Turn-on Switching Energy
Eon2 Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon1 Turn-on Switching Energy
Eon2 Turn-on Switching Energy X
Eoff Turn-off Switching Energy Y
X Eon2 includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 600V
IC = 20A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 20A
RG = 5
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 20A
RG = 5
Min Typ Max Unit
2090
200 pF
40
110
15 nC
50
12
14
70
ns
39
500
1092
µJ
438
12
14 ns
109
88
500
1577
µJ
1187
Temperature sensor NTC
Symbol Characteristic
R25 Resistance @ 25°C
B 25/85 T25 = 298.16 K
RT
= R25
exp
B
25
/
85

1
T25
1
T

T: Thermistor temperature
RT: Thermistor value at T
Min Typ Max Unit
68
4080
k
K
APT website – http://www.advancedpower.com
2-6


Part Number APTGU20H120T3
Description Full bridge
Maker Advanced Power Technology
Total Page 6 Pages
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