APT50GT60BRDQ1G Datasheet | Advanced Power Technology

TYPICAL PERFORMANCE CURVES ® APT50GT60BRDQ1 .. APT50GT60BRDQ1G- APT50GT60BRDQ1(G) 600V - G Denotes Ro HS pliant, Pb Free Terminal Finish. Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. - Low Forward Voltage Drop - Low Tail Current - RBSOA and SCSOA Rated - High Freq. Switching to 100KHz - Ultra Low Leakage Current TO -2 47 MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current All Ratings: TC = 25°C unless otherwise specified. APT50GT60BRDQ1(G) UNIT Volts 600 ±30 @ TC = 25°C 110 52 150 150A @ 600V 446 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2m A) Gate Threshold Voltage (VCE = VGE, I C = 1m A, Tj = 25°C) MIN TYP MAX Units 600 3 1.7 4 2.0 2.2 25 5 2.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) Volts I CES I GES µA n A 11-2005 052-6281 Rev A Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) TBD 120 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be...