| Description | APT5010B2VR 500V 47A 0.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MAX™ • Faster Switching • Lower Leakage • 100% Avalanche Tested • New T-MAX™... |
| Features |
mps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 47 0.100 25...
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| Datasheet |
 APT5010B2VR Datasheet - 61.80KB |
