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Advanced Power Technology

APT34N80LC3 Datasheet Preview

APT34N80LC3 Datasheet

Super Junction MOSFET

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APT34N80B2C3
APT34N80LC3
800V 34A 0.145
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
www.DaPtaoShpeuelta4Ur.cTo-mMAX™ or TO-264 Package
T-MAX
TO-264
D
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT34N80B2C3_LC3 UNIT
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
800
34
102
±20
±30
417
3.33
Volts
Amps
Volts
Watts
W/°C
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
-55 to 150
300
50
17
0.5
670
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 22A)
800
0.125 0.145
IDSS
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C)
1.0 50
500
IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±200
VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2mA)
2.10 3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
"COOLMOScomprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"




Advanced Power Technology

APT34N80LC3 Datasheet Preview

APT34N80LC3 Datasheet

Super Junction MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
tf Fall Time
Eon Turn-on Switching Energy 6
www.DataEShoeffet4U.Tcuormn-off Switching Energy
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 34A @ 25°C
RESISTIVE SWITCHING
VGS = 10V
VDD = 400V
ID = 34A @ 125°C
RG = 2.5
INDUCTIVE SWITCHING @ 25°C
VDD = 533V, VGS = 15V
ID = 34A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 533V, VGS = 15V
ID = 34A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -34A)
t rr Reverse Recovery Time (IS = -34A, dlS/dt = 100A/µs, VR = 400V)
Q rr Reverse Recovery Charge (IS = -34A, dlS/dt = 100A/µs, VR = 400V)
dv/dt Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
APT34N80B2C3 _LC3
MIN TYP MAX UNIT
4510
2050
110
pF
180 355
22 nC
90
25
15
70 80 ns
69
675
580
1145
µJ
670
MIN TYP MAX UNIT
34
102 Amps
1 1.2 Volts
855 ns
30 µC
6 V/ns
MIN TYP MAX UNIT
.30
°C/W
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
4 Starting Tj = +25°C, L = 115.92mH, RG = 25, Peak IL = 3.4A
5 IS = -34A di/dt = 100A/µs VR = 480V TJ = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
3 See MIL-STD-750 Method 3471
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05 SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT34N80LC3
Description Super Junction MOSFET
Maker Advanced Power Technology
Total Page 5 Pages
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