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APT31N80JC3
800V 31A 0.145Ω
Super Junction MOSFET
C O OLMOS
Power Semiconductors
S G D
S
SO
2 T-
27
• Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode www.DataSheet4U.com • Popular SOT-227 Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
"UL Recognized"
ISOTOP ®
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT31N80JC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
800 31 93 ±20 ±30 833 6.67 -55 to 150 300 50 17 0.5
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
APT31N80JC3 Datasheet
