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Advanced Power Technology

APT31N60BCS Datasheet Preview

APT31N60BCS Datasheet

Super Junction MOSFET

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600V 31A 0.100
APT31N60BCS
APT31N60SCS
APT31N60BCSG* APT31N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
• Popular TO-247 or Surface Mount D3 Package
www.DataSheet4U.com
(B)
TO-247
D3PAK
(S)
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
IDM
VGS
PD
TJ,TSTG
TL
dv/dt
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V)
Avalanche Current 2
Repetitive Avalanche Energy 2
Single Pulse Avalanche Energy 3
All Ratings: TC = 25°C unless otherwise specified.
APT31N60B_SCS(G) UNIT
600 Volts
31
19 Amps
93
±30 Volts
255 Watts
2.00 W/°C
-55 to 150
260
°C
50 V/ns
11 Amps
1.2 mJ
800
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
V(BR)DSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 18A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.2mA)
600
0.100
10
TBD
±100
2.1 3 3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Volts
Ohms
µA
nA
Volts




Advanced Power Technology

APT31N60BCS Datasheet Preview

APT31N60BCS Datasheet

Super Junction MOSFET

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 5
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
tf Fall Time
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
www.DataEShoneet4U.Tcuormn-on Switching Energy 6
Eoff Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 400V
ID = 18A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
ID = 18A @ 25°C
RG = 3.3
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 18A, RG = 4.3
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
ID = 18A, RG = 4.3
MIN
APT31N60B_SCS(G)
TYP MAX UNIT
3055
3260
pF
28
65 85
14 nC
22
10
5 ns
110
5
290
125 µJ
170
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 4 (VGS = 0V, IS = -18A)
t rr Reverse Recovery Time (IS = -18A, dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -18A, dlS/dt = 100A/µs)
dv/dt Peak Diode Recovery dv/dt 7
18 Amps
93
1.2 Volts
450 ns
12 µC
4 V/ns
THERMAL CHARACTERISTICS
Symbol Characteristic
RθJC
RθJA
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.5
62 °C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f
3 Starting Tj = +25°C, L = 33.23mH, RG = 25, Peak IL = 11A
4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2%
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.60
0.50
D = 0.9
0.40
0.7
0.30
0.5
Note:
0.20
0.3
t1
t2
0.10
0.1
0 0.05
SINGLE PULSE
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-5
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT31N60BCS
Description Super Junction MOSFET
Maker Advanced Power Technology
Total Page 5 Pages
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