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Advanced Power Technology

APT30M61BFLL Datasheet Preview

APT30M61BFLL Datasheet

POWER MOS 7 FREDFET

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APT30M61BFLL
APT30M61SFLL
300V 54A 0.061
POWER MOS 7 R FREDFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses
and Q
are addressed
. Power MOS
with Power MOS 7® by significantly lowering
7® combines lower conduction and switching
RDS(ON)
losses
g
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
TO-247
D3PAK
• Lower Input Capacitance
www.DaLtaoShweeert4MU.cilolemr Capacitance
• Increased Power Dissipation
• Easier To Drive
D
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D3PAK Package
FAST RECOVERY BODY DIODE
G
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
APT30M61BFLL-SFLL UNIT
VDSS
ID
IDM
VGS
VGSM
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
300 Volts
54
Amps
216
±30
Volts
±40
PD Total Power Dissipation @ TC = 25°C
Linear Derating Factor
403
3.23
Watts
W/°C
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
-55 to 150
300
54
30
1300
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, 27A)
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
300
3
Volts
0.061 Ohms
250
1000
µA
±100 nA
5 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT30M61BFLL Datasheet Preview

APT30M61BFLL Datasheet

POWER MOS 7 FREDFET

No Preview Available !

DYNAMIC CHARACTERISTICS
APT30M61BFLL - SFLL
Symbol Characteristic
Test Conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy 6
Eoff Turn-off Switching Energy
www.DataSEhoenet4U.cToumrn-on Switching Energy 6
Eoff Turn-off Switching Energy
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 150V
ID = 54A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 150V
ID = 54A @ 25°C
RG = 0.6
INDUCTIVE SWITCHING @ 25°C
VDD = 200V, VGS = 15V
ID = 54A, RG = 5
INDUCTIVE SWITCHING @ 125°C
VDD = 200V VGS = 15V
ID = 54A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -54A)
dv/dt Peak Diode Recovery dv/dt 5
trr
Reverse Recovery Time
(IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Reverse Recovery Charge
Qrr (IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
Peak Recovery Current
IRRM (IS = -54A, di/dt = 100A/µs)
Tj = 25°C
Tj = 125°C
MIN
MIN
TYP
3720
920
41
64
23
26
12
20
36
13
367
319
451
348
MAX
UNIT
pF
nC
ns
µJ
TYP MAX UNIT
54 Amps
216
1.3 Volts
8 V/ns
225
ns
400
1.0
µC
4.2
10
Amps
20
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.31
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.89mH, RG = 25, Peak IL = 54A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID54A di/dt 700A/µs VR 300 TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30 0.9
0.25
0.20
0.15
0.10
0.05
0
10-5
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION


Part Number APT30M61BFLL
Description POWER MOS 7 FREDFET
Maker Advanced Power Technology
Total Page 5 Pages
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