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APT1201R5BVR
1200V 10A 1.500Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular TO-247 Package
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MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT1201R5BVR UNIT Volts Amps
1200 10 40 ±30 ±40 370 2.
APT1201R5BVR Datasheet
