0910-60M Datasheet | Advanced Power Technology

DESCRIPTION The 0910-60M is an internally matched, MON BASE transistor capable of providing 60 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization to provide high reliability. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25o C 180 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.5 Volts 8 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200o C + 200o C CASE OUTLINE 55AW-1 ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pg ηc Pd Rl VSWR1 VSWRs Power Out Power Gain Collector Efficiency Pulse Droop Input Return loss Load Mismatch Tolerance Load Mismatch - Stability Note 1: Pulse condition of 150µsec, 5%. Freq = 890 - 1000 MHz Vcc = 40...