Download IRF730 Datasheet PDF
Advanced Power Electronics Corp
IRF730
Description APEC MOSFET provide the power designer with the best bination of fast switching , lower on-resistance and reasonable cost. G DS The TO-220 and package is universally preferred for all mercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice Rating 400 ±20 5.5 3.5 22 74 0.59 152 5.5 -55 to 150 -55 to...