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AP9T16GJ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP9T16GJ datasheet PDF. This datasheet also covers the AP9T16GH variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AP9T16GH_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9T16GJ-HF-3 N-channel Enhancement-mode Power MOSFET
AP9T16GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9T16GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9T16GH-HF-3 N-channel Enhancement-mode Power MOSFET
AP9T16AGH-HF N-channel Enhancement-mode Power MOSFET

Full PDF Text Transcription

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www.DataSheet4U.com AP9T16GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 25mΩ 25A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current 1 Rating 20 ±16 25 16 90 25 0.
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