Datasheet Details
| Part number | AP9985M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 115.13 KB |
| Description | POWER MOSFET |
| Datasheet |
 AP9985M Datasheet
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| Part number | AP9985M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 115.13 KB |
| Description | POWER MOSFET |
| Datasheet |
AP9985M Datasheet
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D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 10 8 48 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
50 Unit ℃/W Data and specifications subject to change without notice 200120031 AP9985M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
AP9985M Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface www.DataSheet4U.
| Part Number | Description |
|---|---|
| AP9985GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9985GM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9985GM-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GH-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GH-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GJ-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9980GM | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |