AP9976GM-HF mosfet equivalent, dual n-channel enhancement mode power mosfet.
G1
BVDSS RDS(ON) ID
D1
G2 S1
60V 20.5mΩ
7.6A
D2
S2
The SO-8 package is widely preferred for all commercialindustria.
AP9976 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of po.
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