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AP9973M - POWER MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.

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Full PDF Text Transcription

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AP9973M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.com Mount Package D1 G2 S2 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 80mΩ 3.9A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 60 ±20 3.9 2.5 20 2 0.
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