Datasheet Details
| Part number | AP9973M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 107.09 KB |
| Description | POWER MOSFET |
| Datasheet | AP9973M_AdvancedPowerElectronics.pdf |
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Overview: AP9973M Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface .. Mount Package D1 G2 S2 D1 D2 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 80mΩ 3.
| Part number | AP9973M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 107.09 KB |
| Description | POWER MOSFET |
| Datasheet | AP9973M_AdvancedPowerElectronics.pdf |
|
|
|
The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 60 ±20 3.9 2.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.5 Unit ℃/W Data and specifications subject to change without notice 201029031 AP9973M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
| Part Number | Description |
|---|---|
| AP9973GH | N-Channel MOSFET |
| AP9973GH-HF | N-Channel MOSFET |
| AP9973GH-HF-3 | N-Channel MOSFET |
| AP9973GI | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9973GJ | N-Channel MOSFET |
| AP9973GJ-HF | N-Channel MOSFET |
| AP9973GJ-HF-3 | N-Channel MOSFET |
| AP9973GP | N-Channel MOSFET |
| AP9973GP-3 | N-Channel MOSFET |
| AP9973GS | N-Channel MOSFET |