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AP9962M Datasheet POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 3 Rating 40 ±20 7 5.5 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

62.5 Unit ℃/W Data and specifications subject to change without notice 200407031 AP9962M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.

Overview

AP9962M Advanced Power Electronics Corp.

D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Low On-resistance ▼ Single Drive Requirement ▼ Surface www.DataSheet4U.

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