AP9962GH Datasheet | Advanced Power Electronics Corp

Description The Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9962GJ) are available for low-profile applications. TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Rating 40 ±20 32 20 150 34.7 0.27 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.5 110 Unit ℃/W ℃/W Data and specifications subject to change without notice AP9962GH/J Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250u A Min. 40 1 - Typ. 0.1 19 13 5 8 8 38 20 5 180 115 Max. Units 20 30 3 1 25 ±100 21 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) .. VGS=10V, ID=20A VGS=4.5V, ID=16A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250u A VDS=10V, ID=20A VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= ± 20V ID=20A VDS=32V VGS=4.5V VDS=20V ID=20A RG=3.3Ω,VGS=10V RD=1.0Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge Gate-Source Charge...