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AP9960M - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Full PDF Text Transcription

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AP9960M Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface Mount Package D2 D1 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 40V 20mΩ 7.8A ID SO-8 S1 G1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 Absolute Maximum Ratings www.DataSheet.net/ Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 7.8 6.2 20 2 0.
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