Download AP9938AGEY-HF Datasheet PDF
Advanced Power Electronics Corp
AP9938AGEY-HF
AP9938AGEY-HF is DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by Advanced Power Electronics Corp.
Description AP9938A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. BVDSS RDS(ON) ID D1 G1 G2 S1 20V 16mΩ 7.5A D2 S2 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 20 V +12 V 7.5 A 6A 40 A PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 1.38 -55 to 150 -55 to 150 W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201412182 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Qg Qgs Qgd td(on) tr td(off) tf Ciss Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input...