Datasheet Details
| Part number | AP9936M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 119.56 KB |
| Description | POWER MOSFET |
| Datasheet |
 AP9936M Datasheet
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| Part number | AP9936M |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 119.56 KB |
| Description | POWER MOSFET |
| Datasheet |
AP9936M Datasheet
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D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 5 4 40 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max.
62.5 Unit ℃/W Data and specifications subject to change without notice 20102202 AP9936M Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.
AP9936M Advanced Power Electronics Corp.
▼ DC-DC Application ▼ Dual N-channel Device ▼ Surface www.DataSheet4U.
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