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AP9930GM Datasheet POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

N1G P2G P1N1D P2N2D N2G N1S N2S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±25 5.5 4.4 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -30 ±25 -4.1 -3.3 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

Overview

AP9930GM Pb Free Plating Product Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Low On-resistance www.DataSheet4U.com P1S/P2S P1G P2G N2D/P2D 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) N2G N1S/N2S N1D/P1D 30V 33mΩ 5.5A -30V 55mΩ -4.

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