AP9924GO Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 +8 6.8 5.4 20 1.38 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 90 Unit ℃/W Data and specifications subject to change without notice 1 2009002021 Free Datasheet http://../ Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=250u A VGS=4.5V, ID=6A VGS=2.5V, ID=4A Min. 20 0.25 - Typ. 19 9 1 4.5 8 10 16 7 400 120 110 Max. Units 20 30 1 10 +100 14.4 640 V mΩ mΩ V S u A n A n C n C n C ns ns ns ns p F p F p F VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge VDS=VGS, ID=250u A VDS=10V, ID=6A VDS=20V, VGS=0V VGS= +8V, VDS=0V ID=6A VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3Ω,VGS=5V RD=10Ω VGS=0V VDS=20V f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.2A, VGS=0V IS=6A, VGS=0V, d I/dt=100A/µs Min. - Typ. 24 15 Max. Units 1.2 V ns n...