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Advanced Power Electronics

AP9924GO Datasheet Preview

AP9924GO Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Advanced Power
Electronics Corp.
Low on-resistance
Capable of 2.5V gate drive
RoHS Compliant
G2
S2
S2
D
TSSOP-8
AP9924GO
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G1
S1
S1
D
BVDSS
RDS(ON)
ID
20V
20mΩ
6.8A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
G1 G2
S1
D
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
20
+8
6.8
5.4
20
1.38
-55 to 150
-55 to 150
Value
90
Units
V
V
A
A
A
W
Unit
/W
Data and specifications subject to change without notice
1
2009002021
Free Datasheet http://www.datasheet4u.com/




Advanced Power Electronics

AP9924GO Datasheet Preview

AP9924GO Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

AP9924GO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=4.5V, ID=6A
VGS=2.5V, ID=4A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VGS= +8V, VDS=0V
ID=6A
VDS=16V
VGS=4.5V
VDS=10V
ID=1A
RG=3.3Ω,VGS=5V
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- - 20 m
- - 30 m
0.25 - 1 V
- 19 -
S
- - 10 uA
- - +100 nA
- 9 14.4 nC
- 1 - nC
- 4.5 - nC
- 8 - ns
- 10 - ns
- 16 - ns
- 7 - ns
- 400 640 pF
- 120 - pF
- 110 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=1.2A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 24 - ns
- 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 250/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
Free Datasheet http://www.datasheet4u.com/


Part Number AP9924GO
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker Advanced Power Electronics
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