Datasheet4U Logo Datasheet4U.com

AP9915K Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

📥 Download Datasheet

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ±12 6.2 5 30 3.2 0.025 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

40 Unit ℃/W Data and specifications subject to change without notice 200323041 AP9915K Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min.

Overview

AP9915K Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D S D SOT-223 G 20V 50mΩ 6.

More Datasheets from Advanced Power Electronics Corp

Part Number Description
AP9915GK N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9915GK-HF-3 N-channel Enhancement-mode Power MOSFET
AP9915H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9915J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9912H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9912J N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9916GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9916GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9916H N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9916J N-CHANNEL ENHANCEMENT MODE POWER MOSFET