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AP9585J Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP9585J datasheet PDF. This datasheet also includes the AP9585H variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP9585H_AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

The through-hole version (AP9585J) is available for low-profile applications.

G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -80 ±25 -11.2 -7.1 30 44.6 0.36 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Overview

AP9585H/J Advanced Power Electronics Corp.

▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -80V 180mΩ -11.

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