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AP9565GEJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the AP9565GEJ datasheet PDF. This datasheet also covers the AP9565GEH variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (AP9565GEH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9565GEH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9565GEM P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9565GEM-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9565AGH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9565AGH-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP9565GEH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic P-CHANNEL ENHANCEMENT MODE POWER MOSFET D G S BVDSS RDS(ON) ID -40V 38mΩ -24A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9565GEJ) is available for low-profile applications.