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AP9563GK Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

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General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -40 ±25 -6.8 -5.4 -30 2.8 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

45 Unit ℃/W Data and specifications subject to change without notice 200914051-1/4 AP9563GK Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.

Overview

AP9563GK Pb Free Plating Product Advanced Power Electronics Corp.

▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast www.DataSheet4U.com Switching Characteristic D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S D -40V 40mΩ -6.

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