Datasheet Details
| Part number | AP9563GH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 107.83 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
 AP9563GH Datasheet
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| Part number | AP9563GH |
|---|---|
| Manufacturer | Advanced Power Electronics Corp |
| File Size | 107.83 KB |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet |
AP9563GH Datasheet
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The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9563GJ) is available for low-profile applications.
G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 ±25 -26 -16 -64 44.6 0.36 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
AP9563GH/J Pb Free Plating Product Advanced Power Electronics Corp.
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| Part Number | Description |
|---|---|
| AP9563GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GH-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GJ-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GK | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563GM-HF-3 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9563H | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |