AP9487GM-HF Datasheet | Advanced Power Electronics Corp

Description Advanced Power MOSFETs from APEC provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 80 +25 4 3.2 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W 1 201107182 Data and specifications subject to change without notice Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 80 1 - Typ. 0.09 7 11 3 5.5 8 4 23 5 80 50 1.5 Max. Units 85 100 3 1 25 +100 18 2.3 V V/℃ mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1m A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A VGS=4.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250u A VDS=10V, ID=4A VDS=80V, VGS=0V VGS=+25V, VDS=0V ID=4A VDS=64V VGS=4.5V VDS=40V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=25V f=1.0MHz f=1.0MHz Drain-Source Leakage Current (Tj=70 C) VDS=64V, VGS=0V Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 1010...