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AP9435GG Datasheet P-CHANNEL MOSFET

Manufacturer: Advanced Power Electronics Corp

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

D S SOT-89 D G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating - 30 ±20 - 4.2 -3.4 -20 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

100 Unit ℃/W Data and specifications subject to change without notice 201021051-1/4 AP9435GG Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min.

Overview

AP9435GG Pb Free Plating Product Advanced Power Electronics Corp.

▼ Low Gate Charge ▼ Fast Switching Characteristic ▼ Single www.DataSheet4U.com Drive Requirement G S ▼ RoHS Compliant D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mΩ - 4.