AP83T03AGMT-HF Datasheet | Advanced Power Electronics Corp

Description AP83T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 ppackage is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. 30V 6mΩ 71A PMPAK® 5x6 Absolute Maximum Ratings@Tj=25o C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 30 +20 71 23.2 18.6 200 50 5 45 -55 to 150 -55 to 150 V V A A A A W W m J ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 2.5 25 Unit ℃/W ℃/W 1 201412183 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate...