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AP80N30W - N-Channel MOSFET

Description

AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness .

The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device.

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AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ High Speed Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 300V 66mΩ 88A Description AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM IDR IDR(PULSE) PD@TC=25℃ IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current 1 http://www.DataSheet4U.
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