AP80N30W Datasheet | Advanced Power Electronics Corp

Description AP80N30 from APEC provide the designer with the best bination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for mercial & industrial applications with higher power level preclusion than TO-220 device. G D TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ IDM IDR IDR(PULSE) PD@TC=25℃ IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current 1 http://..net/ Rating 300 ±30 88 270 88 Units V V A A A A W A m J ℃ ℃ Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current Total Power Dissipation Avalanche Current 3 3 270 150 30 45 -55 to 150 150 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.833 40 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200805132 datasheet pdf - http://..net/ Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Symbol VSD trr Qrr Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (T j=125 C) o Test Conditions VGS=0V, ID=10m A Min. 300 3 Min. - Typ. 38 113 31 44 40 130 150 115 525 10 Typ. 310 3.5 Max. Units 66 4.5 10 200 ±0.1 180 V mΩ V S u A u A u A n C n C n C ns ns ns ns p F p F p F VGS=10V, ID=40A VDS=VGS, ID=250u A VDS=10V, ID=40A VDS=300V, VGS=0V VDS=300V, VGS=0V VGS= ±30V, VDS=0V ID=80A VDS=240V VGS=10V VDS=150V ID=40A RG=10Ω,VGS=10V RD=3.75Ω VGS=0V VDS=30V f=1.0MHz http://..net/ Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance...